STATIC RANDOM-ACCESS MEMORY USING HIGH ELECTRON-MOBILITY TRANSISTORS

被引：2
|
作者：
LEE, SJ [1 ]
LEE, CP [1 ]
HOU, DL [1 ]
ANDERSON, RJ [1 ]
MILLER, DL [1 ]
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 04期
关键词：
D O I：
10.1109/EDL.1984.25852
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：115 / 117
页数：3
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