STUDY OF DEFECT STATES IN SILICON BY PHOTO-IONIZATION SPECTROSCOPY

被引：0
|
作者：
PFLUEGER, R [1 ]
STECKL, AJ [1 ]
CORELLI, JC [1 ]
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 08期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C329 / C329
页数：1
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