METALORGANIC MOLECULAR-BEAM EPITAXY DOPING OF II-VI COMPOUND SEMICONDUCTORS

Site-selective metalorganic molecular beam epitaxy (MOMBE) is a new technique that shows much promise for the controlled substitutional doping of II-VI compound semiconductors. In the present work, initial results on the use of the site-selective doping are reported. The metalorganic compound [t-BuZnAs(t-Bu)2]2 which is employed in the present work is only one of a whole class of potential compounds in which a group II element is pre-bonded to a group V element. ZnSe epitaxial layers doped with this compound exhibit bright near edge luminescence that is dominated by acceptor-bound-exciton transitions. This indicates that the As contained in this designer dopant is incorporated on its proper subsitution site.