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GROWTH AND CHARACTERIZATION OF HIGH-QUALITY CDTE EPILAYERS ON GAAS SUBSTRATES BY HOT-WALL EPITAXY

被引：34
|
作者：
SITTER, H
LISCHKA, K
FASCHINGER, W
WOLFRUM, J
PASCHER, H
PAUTRAT, JL
机构：
[1] UNIV BAYREUTH,INST PHYS,D-8580 BAYREUTH,FED REP GER
[2] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90746-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：377 / 381
页数：5
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