Recent Trends in IGBT Technology

被引：0
|
作者：
Salhi, B. [1 ]
Benfdila, A. [1 ]
机构：
[1] Univ Mouloud Mammeri, LMPDS, Tizi Ouzou, Algeria
来源：
AFRICAN REVIEW OF PHYSICS | 2008年 / 2卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The power semiconductor devices although appeared in 1950s, did not cease to evolve. Indeed, in the beginning of the 1980s, a new concept of device appeared. In this concept, MOS and bipolar technologies were integrated to obtain hybrid devices such as the IGBT with higher characteristics combining the advantages of these two last technologies [1].
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页码：21 / 23
页数：3
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