CW INGAASP/INP INJECTION-LASERS WITH VERY LOW THRESHOLD CURRENT-DENSITY AT ROOM-TEMPERATURE

被引：0
|
作者：
DOLGINOV, LM [1 ]
DRAKIN, AE [1 ]
ELISEEV, PG [1 ]
SVERDLOV, BN [1 ]
SHEVCHENKO, EG [1 ]
机构：
[1] PN LEBEDEV PHYS INST,MOSCOW,USSR
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期
关键词：
D O I：
10.1109/JQE.1985.1072714
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：646 / 649
页数：4
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