EFFECT OF TEMPERATURE ON ETCHING RATE OF POLYIMIDE FILMS IN AN OXYGEN PLASMA

被引：0
|
作者：
KUVALDINA, EV
LYUBIMOV, VK
MAKSIMOV, AI
RYBKIN, VV
机构：
来源：
HIGH ENERGY CHEMISTRY | 1990年 / 24卷 / 05期
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中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied etching of polyimide (PI) films in a dc positive column under O2 at PI temperatures of 295-400 K. Effects of temperature on the following rates were measured: PI etching, formation of gaseous products, and O2 absorption. The activation energy (DELTA-E0) of all the processes proved equal and had three temperature zones with different DELTA-E0's whose positions were independent of discharge parameters. Reasons for these effects are discussed.
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页码：408 / 411
页数：4
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