CRYSTAL-GROWTH OF COLUMN-III NITRIDES AND THEIR APPLICATIONS TO SHORT-WAVELENGTH LIGHT EMITTERS

被引：44

作者：

AKASAKI, I

AMANO, H

机构：

[1] Meijo University, Department of Electrical and Electronic Engineering 1-501, Tempaku-ku, Nagoya, 468, Shiogamaguchi

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00501-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Difficulty in growing high-quality column III nitrides on dissimilar substrates and difficulty in controlling conductivity, especially in achieving p-type conductivity had restricted their device applications for a long time. Establishment of the technique and understanding the mechanism for the heteroepitaxial growth of nitrides on a sapphire substrate and the realization of GaN and AlGaN having distinct p-type conductivity will lead to the accomplishment of high performance short wavelength light emitting devices based on column III nitrides.

引用

页码：455 / 461

页数：7

共 20 条

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[2] ULTRATHIN COLLOIDAL CDSE NANOPLATELETS FOR SHORT-WAVELENGTH LIGHT EMITTERS
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[3] PERSPECTIVE OF UV BLUE-LIGHT-EMITTING DEVICES BASED ON COLUMN-III NITRIDES
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[9] Nucleation and faceting in selectively grown ZnS pyramidal dot array for short-wavelength light emitters
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[10] III-V NITRIDES - THERMODYNAMICS AND CRYSTAL-GROWTH AT HIGH N-2 PRESSURE
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