CALCULATION OF THE THRESHOLD CURRENT OF INGAASP/INP AND INGAASP/GAAS DOUBLE-HETEROSTRUCTURE LASERS WITH SEPARATE CONFINEMENT

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作者：

GARBUZOV, DZ

EVTIKHIEV, VP

KARPOV, SY

SOKOLOVA, ZN

KHALFIN, VB

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 03期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：279 / 284

页数：6

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