PREPARATION OF DEVICE-QUALITY CU(IN,GA)SE-2 THIN-FILMS DEPOSITED BY COEVAPORATION WITH COMPOSITION MONITOR

被引：129
|
作者：
KOHARA, N
NEGAMI, T
NISHITANI, M
WADA, T
机构：
[1] Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Soraku-gun, Kyoto, 619-02, 3-4 Hikaridai, Seika-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期
关键词：
COMPOUND SEMICONDUCTOR; CHALCOPYRITE; SOLAR CELL; THIN FILM; COEVAPORATION; CUINSE2; COMPOSITION;
D O I：
10.1143/JJAP.34.L1141
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The chemical composition of Cu(In, Ga)Se-2 (CIGS) thin film was monitored in real time during the physical vapor deposition. The temperature of growing CIGS film was found to depend on the composition ratio of Cu/(In+Ga) when the film was deposited under constant heating power. The composition monitoring system can be easily applied to a 3-stage deposition process of the CIGS films. The solar cells (active area: 1 cm(2)) fabricated by using the obtained CIGS absorber layer showed an efficiency of 15.4% under standard AM 1.5 illumination.
引用
收藏
页码：L1141 / L1144
页数：4
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