CHARACTERISTICS HIGH-FREQUENCY PROPERTIES OF A SYMMETRIC DIODE STRUCTURE IN THE CASE OF BALLISTIC ELECTRON MOTION

被引：0
|
作者：
BANNOV, NA
RYZHII, VI
FEDIRKO, VA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：36 / 38
页数：3
相关论文
共 50 条
  • [1] CHARACTERISTICS OF HIGH-FREQUENCY PROPERTIES OF BALLISTIC BIPOLAR HETEROTRANSISTORS
    RYZHII, VI
    FEDIRKO, VA
    KHMYROVA, II
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 527 - 530
  • [2] HIGH-FREQUENCY CHARACTERISTICS OF BALLISTIC BIPOLAR HETEROTRANSISTORS
    RYZHY, VI
    FEDIRKO, VA
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (11): : 2250 - 2256
  • [3] HIGH-FREQUENCY PROPERTIES OF THE ELECTRON FLOW SLOWING DOWN IN A PLANAR DIODE
    Pashchenko, A. V.
    Melezhik, O. G.
    Romanov, S. S.
    Sitnikov, D. A.
    Tarasov, I. K.
    Tarasov, M. I.
    Shapoval, I. M.
    Novikov, V. E.
    Yatsyshin, V. A.
    [J]. PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2011, (05): : 86 - 92
  • [4] High-frequency electron transport in a model ballistic MOSFET
    Horák, M
    [J]. ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2004, : 219 - 222
  • [5] High-frequency characteristics of a quantum well diode
    Ershov, M
    Ryzhii, V
    Saito, K
    [J]. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 154 - 157
  • [6] On the motion of electron beams in the high-frequency field of the klynotron slowing structure
    Kornienko, Yu.V.
    Masalov, D.S.
    [J]. Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 2007, 66 (20): : 1885 - 1897
  • [7] HIGH-FREQUENCY PROPERTIES OF RESONANT TUNNELING DIODE
    SHENG, HY
    SINKKONEN, J
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (04) : 537 - 542
  • [8] High-frequency properties of an abrupt heterojunction diode
    Horák, M
    [J]. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 61 - 66
  • [9] HIGH-FREQUENCY EFFECTS OF BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS
    FRENSLEY, WR
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (07): : 137 - 139
  • [10] HIGH-FREQUENCY SPECTRAL CHARACTERISTICS OF EARTHQUAKES AND REPRESENTATION OF HIGH-FREQUENCY STRONG GROUND MOTION
    HANKS, TC
    [J]. TRANSACTIONS-AMERICAN GEOPHYSICAL UNION, 1978, 59 (04): : 325 - 325
12345