INTERSUBBAND TRANSITION IN RESONANTLY COUPLED ASYMMETRIC DOUBLE-QUANTUM-WELL

被引：0

作者：

RHEE, SJ ^{[1
]}

OH, JC ^{[1
]}

KIM, YM ^{[1
]}

KO, HS ^{[1
]}

KIM, WS ^{[1
]}

LEE, DH ^{[1
]}

WOO, JC ^{[1
]}

YOO, KH ^{[1
]}

机构：

[1] KYUNG HEE UNIV,DEPT PHYS,SEOUL 130701,SOUTH KOREA

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The study on the intersubband separation of asymmetric double quantum well (ADQW) is reported. The subband separations in resonantly and non-resonantly coupled ADQWs prepared with AlGaAs-GaAs-InGaAs and AlGaAs-GaAs were measured by photoluminescence excitation spectroscopy. The observed spectra were in good agreement with the subband levels calculated by transfer matrix method. In resonantly coupled ADQW, the interwell transition was significantly enhanced.

引用

页码：415 / 420

页数：6

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