SIZE EFFECT IN PARABOLIC GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：11
|
作者：
WALUKIEWICZ, W [1 ]
HOPKINS, PF [1 ]
SUNDARAM, M [1 ]
GOSSARD, AC [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.44.10909
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the results of experimental and theoretical studies of the electron mobility in remotely doped, quasi-three-dimensional GaAs/AlxGa1-xAs parabolic wells. We show that the electron mobility in such structures is strongly reduced by a size effect due to nonspecular scattering of electrons from rough walls confining the electron gas. The roughness of the walls results from random fluctuations of the remote-ionized-impurity concentration and/or the alloy composition. Incorporation of the size effect allows for a quantitative description of the electron mobility in these parabolic wells.
引用
收藏
页码：10909 / 10912
页数：4
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