DYNAMIC GAAS CAPACITIVELY COUPLED DOMINO LOGIC (CCDL)

被引：13
|
作者：
HOE, DHK
SALAMA, CAT
机构：
[1] Department of Electrical Engineering, University of Toronto, Toronto, Ont.
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1109/4.78273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dynamic capacitively coupled domino logic (CCDL) has been proposed as a practical means of implementing low-power and high-speed complex gates. In this paper, the CCDL gate delay characteristics obtained from an analytical model and from test circuits implemented in a 1-mu-m GaAs E/D process are presented. In addition, the feasibility of using CCDL gates to implement practical circuits is demonstrated by the experimental characterization of a 4-b carry-lookahead adder. The adder has a critical delay of 1.1 ns and a power dissipation of 96 mW.
引用
收藏
页码：844 / 849
页数：6
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