PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED TUNGSTEN THIN-FILMS ON SILICON-WAFERS

被引：17

|

作者：

DIEM, M

FISK, M

GOLDMAN, J

机构：

来源：

THIN SOLID FILMS | 1983年 / 107卷 / 01期

关键词：

D O I：

10.1016/0040-6090(83)90005-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：39 / 43

页数：5

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[1] KINETICS AND PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED TUNGSTEN FILMS ON SILICON SUBSTRATES
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