RARE-GAS INCORPORATION IN ION-BEAM SPUTTERING DEPOSITED SI FILMS

This report is an analysis of rare gas incorporation in IBS deposited Si films. An original experimental set up with the three main parts - duoplasmatron source, ion beam focusing chamber, deposition chamber - was used. The maximum current density (50-500 mu A cm** minus **2), atomic mass and angle of incidence of the ion beam - on the angular distribution and concentration level of the rare gas trapped in the layer was studied. An angular distribution with a maximum near the direction of the ion beam specular reflection was obtained. This result was observed even for ions whose mass is higher than that of the target atoms, i. e. where the backscattered mechanism at one collision of the primary ion is not very probable. By means of these results, hypotheses on the mechanism of the rare gas atom emission from the target and consequently, on their energy can be elaborated.