OXIDATION EFFECTS ON GALLIUM DIFFUSION IN SILICON

被引：5

作者：

MIZUO, S

HIGUCHI, H

机构：

来源：

DENKI KAGAKU | 1982年 / 50卷 / 04期

关键词：

D O I：

10.5796/kogyobutsurikagaku.50.338

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：338 / 343

页数：6

共 50 条

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[2] GALLIUM DIFFUSION IN SILICON
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) : 434 - &
[3] DIFFUSION OF GALLIUM IN SILICON
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[4] DIFFUSION OF GALLIUM IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5833 - 5837
[5] EFFECTS OF OXIDATION ON ALUMINUM DIFFUSION IN SILICON
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01): : 56 - 60
[6] DIFFUSION OF SILICON IN GALLIUM ARSENIDE
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[J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &
[7] ANOMALOUS DIFFUSION OF GALLIUM IN SILICON
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OHKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) : 1745 - &
[8] RETARDATION OF GALLIUM DIFFUSION IN SILICON
OKAMURA, M
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (10) : 823 - &
[9] DIFFUSION OF GALLIUM IN INHOMOGENEOUS SILICON
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[J]. SOVIET PHYSICS-SOLID STATE, 1964, 5 (12): : 2649 - 2651
[10] THE DIFFUSION OF GALLIUM IN A SILICON DIOXIDE-SILICON SYSTEM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (03) : C59 - C59