ANOMALOUS PHOTOMAGNETORESISTANCE EFFECT IN MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURES

被引:25
|
作者
LURYI, S [1 ]
KASTALSKY, A [1 ]
机构
[1] BELL COMMUN RES,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.95155
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:164 / 167
页数:4
相关论文
共 50 条
  • [1] INTERFACE STATES OF MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
    CHUNG, SK
    WU, Y
    WANG, KL
    SHENG, NH
    LEE, CP
    MILLER, DL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 149 - 153
  • [2] PHOTOREFLECTANCE CHARACTERIZATION OF ALGAAS GAAS MODULATION-DOPED HETEROSTRUCTURES
    PAN, N
    ZHENG, XL
    HENDRIKS, H
    CARTER, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2355 - 2360
  • [3] LARGE LATERAL PHOTOVOLTAIC EFFECT IN MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
    TABATABAIE, N
    MEYNADIER, MH
    NAHORY, RE
    HARBISON, JP
    FLOREZ, LT
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (08) : 792 - 794
  • [4] Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study
    Naik, KG
    Rao, KSRK
    Srinivasan, T
    Muralidharan, R
    Mehta, SK
    [J]. SOLID STATE COMMUNICATIONS, 2004, 132 (12) : 805 - 808
  • [5] Limit of electron mobility in AlGaAs/GaAs modulation-doped heterostructures
    Saku, T
    Horikoshi, Y
    Tokura, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (1A): : 34 - 38
  • [6] CARRIER CONCENTRATION IN MODULATION-DOPED ALGAAS-GAAS HETEROSTRUCTURES
    WEIMANN, G
    SCHLAPP, W
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (03): : 139 - 143
  • [7] HOLE MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES - GAAS-ALGAAS
    WALUKIEWICZ, W
    [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5557 - 5560
  • [8] ELECTRON-DISTRIBUTION IN MODULATION-DOPED ALGAAS/GAAS SINGLE QUANTUM-WELLS AND INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    SUZUKI, K
    SAITO, K
    SAKU, T
    SUGIMURA, A
    HORIKOSHI, Y
    YAMADA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1266 - 1269
  • [9] EBIC study of field effect transistors on modulation-doped AlGaAs/InGaAs/GaAs heterostructures
    Sieber, B
    Farvacque, JL
    [J]. SOLID STATE PHENOMENA, 1998, 63-4 : 13 - 24
  • [10] A NEW GROWTH TECHNIQUE FOR MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURES BY MOCVD
    KASAI, K
    KOMENO, J
    TAKIKAWA, M
    NAKAI, K
    OZEKI, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) : 659 - 662