Growing of GaxIn1-xSb single crystals by Czochralski technique

被引：0
|
作者：
Kozhemyakin, G. N. [1 ]
Ruban, R. V. [1 ]
机构：
[1] V Dal Eastern Ukraininan Natl Univ, Dept Appl Mat, Lab Grystal Growth, 20A Bl Molodezhny, UA-91034 Lugansk, Ukraine
来源：
FUNCTIONAL MATERIALS | 2005年 / 12卷 / 04期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effective distribution coefficients for Ga in GaxIn1-xSb single crystals (x >= 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of GaxIn1-xSb single crystals using the Czochralski technique has been developed and the crystals up to 18 mm in diameter have been grown. The influence of annealing on the crack formation in GaxIn1-xSb single crystals after cutting thereof has been studied. The crystal annealing at 170 degrees C for 10-12 h has been found to reduce the number of cracks longer than 0.2 mm.
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页码：762 / 764
页数：3
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