PEAK ELECTRON MOBILITIES BETWEEN 2.75 AND 3.32X10(5)CM2V-1S-1 IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY WITH AS2

被引：5
|
作者：
STANLEY, CR
HOLLAND, MC
KEAN, AH
机构：
[1] Department of Electronics and Electrical Engineering, University of Glasgow
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 19期
关键词：
D O I：
10.1063/1.103988
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Exceptionally pure n-GaAs has been grown without intentional doping by solid-source molecular beam epitaxy (MBE) using arsenic dimers (As2). Peak electron mobilities in the range 2.75-3.32×105 cm 2 V-1 s-1 at temperatures of ≊40-50 K with free-electron densities n=1×1014 cm-3 have been measured for a series of layers grown under a variety of conditions. These mobilities are among the highest recorded for MBE-grown GaAs.
引用
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页码：1992 / 1994
页数：3
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