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- [1] PHOTOCONDUCTIVITY OF GERMANIUM IRRADIATED BY FAST NEUTRONS AT 77-DEGREES-KSOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1037 - 1040NOVIKOV, SRRUBINOVA, EE
- [2] ELECTRICAL PROPERTIES OF GERMANIUM IRRADIATED WITH FAST NEUTRONS AT 77-DEGREES-KSOVIET PHYSICS-SOLID STATE, 1964, 6 (04): : 819 - 822KONOPLEVA, RFNOVIKOV, SR
- [3] PHOTOCONDUCTIVITY OF GERMANIUM IRRADIATED WITH FAST NEUTRONSSOVIET PHYSICS-SOLID STATE, 1964, 6 (03): : 690 - 691NOVIKOV, SRRUBINOVA, EERYVKIN, SM
- [4] INVESTIGATION OF ANNEALING PROCESSES IN GERMANIUM IRRADIATED AT 77 DEGREES K WITH 14 MEV NEUTRONSZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1970, A 25 (10): : 1417 - &WOLF, D
- [5] RADIATIVE RECOMBINATION IN GERMANIUM IRRADIATED WITH FAST ELECTRONS AT T=77 DEGREES KSOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 252 - +GERASIMOV, ABKONOVALE.BMERISTAVI, GL
- [6] INVESTIGATION OF THE 300-DEGREES-K ANNEALING STAGE OF GERMANIUM IRRADIATED WITH FAST ELECTRONS AT 77-DEGREES-KSOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 878 - 880GERASIMOV, ABGOGOTISHVILI, MKDOLIDZE, NDKONOVALENKO, BMMAGRADZE, MV
- [7] PHOTOCONDUCTIVITY OF GAMMA-IRRADIATED METHYLTETRAHYDROFURAN GLASS AT 77 DEGREES KCANADIAN JOURNAL OF CHEMISTRY-BACK YEAR, 1970, 48 (14): : 2182 - +BAVERSTOCK, KFDYNE, PJ
- [8] CHANGES IN RADIATION DEFECTS CAUSED BY ANNEALING AT 220-DEGREES-K OF GERMANIUM IRRADIATED WITH FAST ELECTRONS AT 77-DEGREES-KSOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 843 - 844GERASIMOV, ABGOGOTISHVILI, MKDOLIDZE, NDKONOVALENKO, BM
- [9] ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE IRRADIATED BY NEUTRONS AT 77 DEGREES K AND BY ELECTRONS AT 300 DEGREES KSOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (09): : 2224 - +VODOPYAN.LKKURDIANI, NI
- [10] PULSE PHOTOCONDUCTIVITY OF GAMMA-IRRADIATED PROPANOL AT 77-DEGREES-KHIGH ENERGY CHEMISTRY, 1977, 11 (03) : 209 - 214KOSTIN, AKGOLOVANOV, VVZOLOTAREVSKII, VIVANNIKOV, AV