A DIFFUSION-MODEL FOR INDIUM IN HG1-XCDXTE

被引：6

作者：

WONG, J ^{[1
]}

ROEDEL, RJ ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.577305

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A model based on the known defect structure of Hg1-xCd(x)Te has been developed for explaining indium diffusion in this semiconductor. Based on a charged-vacancy mechanism, the model qualitatively predicts the correct trends for diffused samples which have been electroplated with indium. The diffusion coefficient predicted by the model has a weak mercury partial pressure dependence but a concentration dependence which increases linearly with the indium concentration. This is in agreement with published experimental results. In addition, the model also qualitatively explains why only a small fraction of the indium is ionized without resorting to the current explanation that the unionized portion is tied up as indium telluride (In2Te3).

引用

页码：2258 / 2263

页数：6

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