DEFECT LEVELS OF AGGAS2 SINGLE-CRYSTALS

被引：4

作者：

NIWA, E ^{[1
]}

MOCHIZUKI, K ^{[1
]}

MASUMOTO, K ^{[1
]}

机构：

[1] ISHINOMAKI SENSHU UNIV,FAC SCI & ENGN,DEPT ELECTR MAT,ISHINOMAKI 986,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; DEFECT LEVEL; AGGAS2; CHALCOPYRITE;

D O I：

10.7567/JJAPS.32S3.612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The defect levels of as-grown AgGaS2 single crystals with the energy depths of about 20, 50, 100, 170, 230, 390 and 700 meV from the edge of either valence band or conduction band were estimated from the temperature dependence of photoconductivity spectrum. The relations between those levels and the emission peaks in the photoluminescence spectrum were discussed and a possible band diagram was made.

引用

页码：612 / 614

页数：3

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