CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .2. PLASMA ENHANCED DEPOSITION

被引：23

作者：

COMFORT, JH ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期

关键词：

D O I：

10.1149/1.2097381

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2398 / 2405

页数：8

共 50 条

[1] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1245 - 1247
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