EPITAXIAL-GROWTH OF GAN/AIN HETEROSTRUCTURES

被引：86
|
作者：
YOSHIDA, S
MISAWA, S
GONDA, S
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词：
D O I：
10.1116/1.582496
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：250 / 253
页数：4
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