X-RAY ABSORPTION STUDY OF TANTALUM OXIDE-FILMS ON SILICON

被引：7
|
作者：
LONG, GG
REVESZ, AG
KURIYAMA, M
机构：
[1] NBS, Gaithersburg, MO, USA, NBS, Gaithersburg, MO, USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 70卷 / 02期
关键词：
D O I：
10.1016/0022-3093(85)90326-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
16
引用
收藏
页码：271 / 278
页数：8
相关论文
共 50 条
  • [1] THE STUDY OF ULTRATHIN TANTALUM OXIDE-FILMS BEFORE AND AFTER ANNEALING WITH X-RAY PHOTOELECTRON-SPECTROSCOPY
    MUTO, A
    YANO, F
    SUGAWARA, Y
    IIJIMA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (5A): : 2699 - 2702
  • [2] GLANCING ANGLE X-RAY STUDIES OF OXIDE-FILMS
    DAVENPORT, AJ
    ISAACS, HS
    [J]. CORROSION SCIENCE, 1990, 31 (pt 1) : 105 - 110
  • [3] LAWS OF GROWTH OF DOPED OXIDE-FILMS ON SILICON, INVESTIGATED BY THE X-RAY SPECTRAL METHOD
    TEREKHOV, VA
    DOMASHEVSKAYA, EP
    ANDREESHCHEV, VM
    MITTOVA, IY
    ROMASHCHENKO, YN
    VASILEVA, LB
    BRYTOV, IA
    [J]. INORGANIC MATERIALS, 1981, 17 (02) : 199 - 203
  • [4] OPTICAL-PROPERTIES OF TANTALUM OXIDE-FILMS ON SILICON
    REVESZ, AG
    REYNOLDS, JH
    ALLISON, JF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 889 - 894
  • [5] APPLICATION OF X-RAY SPECTROSCOPY TO THE STUDY OF ELECTROCHEMICALLY FORMED SURFACE OXIDE-FILMS
    SCHROTT, AG
    FRANKEL, GS
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1993, 37 (02) : 191 - 206
  • [6] USE OF X-RAY SPECTRAL ANALYSIS TO INVESTIGATE THE FORMATION MECHANISM OF DOPED OXIDE-FILMS ON SILICON
    DOMASHEVSKAYA, EP
    MITTOVA, IY
    YURAKOV, YA
    TEREKHOV, VA
    ANOKHIN, VZ
    BOIKO, VI
    [J]. INORGANIC MATERIALS, 1978, 14 (07) : 925 - 928
  • [7] A PHOTOELECTROCHEMICAL STUDY ON ANODIC TANTALUM OXIDE-FILMS
    DIQUARTO, F
    GENTILE, C
    PIAZZA, S
    SUNSERI, C
    [J]. CORROSION SCIENCE, 1993, 35 (1-4) : 801 - 808
  • [8] X-RAY SPECTRAL STUDIES OF ANODIC OXIDE-FILMS ON ALUMINUM
    BELOV, VT
    CHERNYKH, MA
    TEREKHOV, VA
    ANDREESHCHEV, VM
    LEBEDEVA, MP
    DOMASHEVSKAYA, EP
    [J]. JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1984, 57 (06): : 1300 - 1303
  • [9] PROPERTIES OF TANTALUM OXIDE-FILMS DEPOSITED ON SILICON BY CVD AND SPUTTERING
    OKADA, M
    FUKAYA, H
    IDO, T
    [J]. DENKI KAGAKU, 1985, 53 (02): : 109 - 113
  • [10] X-RAY-ABSORPTION STUDY OF ELECTROCHEMICALLY GROWN OXIDE-FILMS ON ALCR SPUTTERED ALLOYS
    FRANKEL, GS
    SCHROTT, AG
    DAVENPORT, AJ
    ISAACS, HS
    JAHNES, CV
    RUSSAK, MA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (01) : 83 - 90
12345