FULL-SCALE SIMULATION OF QUANTUM DEVICES WITH INTERFACE DISORDER AND RANDOMNESS

We present a three dimensional self-consistent numerical analysis of the transport properties in quantum dot nanostructures. It is shown that structural disorder in the form of interface and surface roughness gives rise to resonant features that strongly resemble the experimental data. We thereby demonstrate that disorder mechanisms in planar nanostructures have a profound influence on near-threshold carrier transport to the extent that they may dominate the effects of intentionally fabricated confinement features.