QUENCHING AND RECOVERY SPECTRA OF MIDGAP LEVELS (EL2) IN SEMIINSULATING GAAS MEASURED BY DOUBLE-BEAM PHOTOCONDUCTIVITY

被引：15

|

作者：

HARIU, T

SATO, T

KOMORI, H

MATSUSHITA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1068 / 1072

页数：5

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[4] INFLUENCE OF THE EL2-]EL2 TRANSITION ON PHOTOCONDUCTIVITY AND THERMALLY STIMULATED PROCESSES IN SEMIINSULATING GAAS
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[5] OPTICAL RECOVERY OF PHOTOQUENCHING AT THE MIDGAP ELECTRON TRAPS (EL2 FAMILY) IN GAAS
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[6] ELECTRICAL ACTIVATION OF SILICON IMPLANTED IN SEMIINSULATING GAAS - ROLE OF BORON AND THE MIDGAP ELECTRON TRAP (EL2)
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[7] KINETICS OF HOLES OPTICALLY-EXCITED FROM THE ASGA EL2 MIDGAP LEVEL IN SEMIINSULATING GAAS
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[8] HIGH-RESOLUTION PHOTOCONDUCTIVITY SPECTRA OF THE EL2 DEFECT IN GAAS
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[9] OPTICAL CHARACTERIZATION OF SEMIINSULATING GAAS - DETERMINATION OF THE FERMI ENERGY, THE CONCENTRATION OF THE MIDGAP EL2 LEVEL AND ITS OCCUPANCY
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[10] DIRECT EVIDENCE FOR A CHARGE-CONTROLLED OPTICAL QUENCHING OF EL2 CENTERS IN SEMIINSULATING GAAS
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