TEMPERATURE, LIGHT-INTENSITY AND MICROSTRUCTURE DEPENDENCE OF THE REFRACTIVE-INDEX OF POLYCRYSTALLINE SILICON FILMS

被引：4

作者：

CHANDRASEKHAR, S ^{[1
]}

VENGURLEKAR, AS ^{[1
]}

KARULKAR, VT ^{[1
]}

ROY, SK ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

THIN SOLID FILMS | 1989年 / 169卷 / 02期

关键词：

D O I：

10.1016/0040-6090(89)90702-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：205 / 212

页数：8

共 50 条

[1] NONLINEAR TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF POLYCRYSTALLINE SILICON FILMS AND THE INFLUENCE OF MICROSTRUCTURAL DISORDER
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : 2072 - 2076
[2] DEPENDENCE OF THE PHASE OF THE GDALO3-CR-3+ NONLINEAR REFRACTIVE-INDEX ON THE LIGHT-INTENSITY
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[3] TEMPERATURE AND INTENSITY DEPENDENCE OF THE REFRACTIVE-INDEX OF A COMPOUND SEMICONDUCTOR
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[4] THEORY OF INTENSITY DEPENDENCE OF REFRACTIVE-INDEX
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[J]. JOURNAL OF CHEMICAL PHYSICS, 1972, 57 (04): : 1798 - &
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[J]. MICROSCOPE, 1981, 29 (02): : 93 - 101
[8] TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX IN SEMICONDUCTORS
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[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (06) : 918 - 922
[9] TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF CRYSTALLINE GERMANIUM-SILICON ALLOYS
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[10] CORRELATION OF REFRACTIVE-INDEX AND SILICON CONTENT OF SILICON OXYNITRIDE FILMS
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