RESONANT-CAVITY LIGHT-EMITTING DIODE WITH AN ALXOY/GAAS REFLECTOR

被引：37
|
作者：
HUFFAKER, DL
LIN, CC
SHIN, J
DEPPE, DG
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期
关键词：
D O I：
10.1063/1.113614
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A resonant cavity light emitting diode is fabricated which makes use of a Ag mirror/contact and a buried AlxOy/GaAs Bragg reflector. The buried AlxOy is formed by the selective conversion of AlAs. The differential light output efficiency is measured and found to be ∼5.5% when the AlxOy/GaAs reflector is present versus ∼2.5% for a control device without the AlxOy/GaAs mirror. The measured efficiencies are compared with calculations.© 1995 American Institute of Physics.
引用
收藏
页码：3096 / 3098
页数：3
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