QUARTZ ETCHING FOR PHASE-SHIFTING MASKS

被引:6
|
作者
DAHM, G
RANGELOW, IW
HUDEK, P
KOOPS, HWP
机构
[1] Institute of Technical Physics, University of Kassel, D-34109 Kassel
[2] Institute of Computer Systems, Slovak Acad. Sci., SK-84 237 Bratislava
[3] DBP Telekom Forschungs- und Entwicklungszentrum, D-64295 Darmstadt
关键词
D O I
10.1016/0167-9317(94)00103-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper a technology for dry etching of quartz for the fabrication of Phase Shift Masks (PSMs) and micromechanic applications is presented. Reactive Ion Etching (RIE) with CF4/SF6 +O2 chemistry and a chrome and/or resist/chrome mask is applied to quartz etching. Quartz structures and PSM with high resolution have been fabricated on commercially available chrome-quartz blanks. The chrome layer serves two purposes: first, it is used to define the structures with high resolution and low edge roughness, and second, it is used as an attenuating layer for rim-type PSM after wet etching or as a phase shifter in combination with the residual resist layer.
引用
收藏
页码:263 / 266
页数:4
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