SIMULATION OF RETARDED DIFFUSION OF ANTIMONY AND ENHANCED DIFFUSION OF PHOSPHORUS IN SILICON

被引：3
|
作者：
BRABEC, T
GUERRERO, E
BUDIL, M
POETZL, HW
机构：
来源：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1987年 / 67卷 / 04期
关键词：
D O I：
10.1007/BF01304107
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：415 / 420
页数：6
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