RESISTIVITY AND TEMPERATURE-COEFFICIENT OF RESISTIVITY OF THE FE/ZR MULTILAYER FILMS

被引：0
|
作者：
LUCINSKI, T
STOBIECKI, F
机构：
来源：
ACTA PHYSICA POLONICA A | 1994年 / 85卷 / 02期
关键词：
D O I：
10.12693/APhysPolA.85.443
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The resistivity (rho) and temperature coefficient of resistivity (TCR) dependencies on modulation wavelength (lambda) were examined in Fe/Zr multilayer thin films. It was shown that the rho(lambda) and TCR(lambda) behaviours can be explained on the basis of the assumption that the amorphous phase can be spontaneously formed during the deposition process. We found that the effective thickness of the amorphous phase was almost-equal-to 2 nm per single interface.
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页码：443 / 447
页数：5
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