PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON - EFFECT OF RF POWER

被引：5

|

作者：

KUZNETSOV, VI

VANOORT, RC

METSELAAR, JW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.343110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：575 / 580

页数：6

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