STRUCTURE DETERMINATION OF ULTRATHIN NBSE2 FILMS BY GRAZING-INCIDENCE X-RAY-DIFFRACTION

被引：6

作者：

SHIMADA, T

FURUKAWA, Y

ARAKAWA, E

TAKESHITA, K

MATSUSHITA, T

YAMAMOTO, H

KOMA, A

机构：

[1] KOBE STEEL LTD,ELECTR RES LAB,KOBE 65122,JAPAN

[2] GRAD UNIV ADV STUDIES,DEPT SYNCHROTRON RADIAT SCI,TSUKUBA 305,JAPAN

[3] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,OHO,IBARAKI 305,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 07期

关键词：

D O I：

10.1016/0038-1098(94)90168-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Grazing incidence x-ray diffraction (GID) technique was applied to determine the three dimensional structures of NbSe2 films grown by van der Waals epitaxy. Atomic arrangements along the surface normal in nm-order films were established from the analysis of Bragg rod profiles measured with GID. The obtained structural polytypes of the films grown on HOPG and Se terminated GaAs(111BAR) were 2Hb and a mixture of 2Hb and 3R, respectively. This result indicates that the polytypes are controlled by the substrate materials in van der Waals epitaxy.

引用

页码：583 / 586

页数：4

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