DYNAMIC PERFORMANCE OF MODIFIED FIELD-EFFECT TRANSISTOR

被引:0
|
作者
KHAN, AA [1 ]
SINGH, L [1 ]
机构
[1] AN COLL,DEPT PHYS,PATNA 800013,INDIA
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:565 / 566
页数:2
相关论文
共 50 条
  • [1] OPTIMIZING THE PERFORMANCE OF MODIFIED FIELD-EFFECT TRANSISTOR
    KHAN, AA
    SINGH, L
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1987, 62 (03) : 435 - 440
  • [2] IMPROVED PERFORMANCE OF A FIELD-EFFECT TRANSISTOR
    MUZUMDAR, P
    MIRCHANDANI, K
    TRUSELL, F
    DROZNIN, V
    MILSHTEIN, S
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (04) : 357 - 359
  • [3] DC MODELING OF MODIFIED FIELD-EFFECT TRANSISTOR
    ALAKHRAS, MA
    KHAN, AA
    ALAMOUD, AM
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (03) : 417 - 424
  • [4] DYNAMIC PROPERTIES OF A BALLISTIC FIELD-EFFECT TRANSISTOR
    MANTOROV, VV
    SUKHANOV, AA
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (08): : 882 - 886
  • [5] FIELD-EFFECT TRANSISTOR
    GULDENPFENNIG, P
    [J]. ELEKTROTECHNISCHE ZEITSCHRIFT B-AUSGABE, 1968, 20 (17): : 474 - +
  • [6] PERFORMANCE AND OPTIMIZATION OF DIPOLE HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR
    ZOU, JP
    DONG, HZ
    GOPINATH, A
    SHUR, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) : 250 - 256
  • [7] FIELD-EFFECT MODIFIED TRANSISTOR - HIGH-RESPONSIVITY PHOTOSENSOR
    NORDSTROM, RA
    MEINDL, JD
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 411 - +
  • [8] Analysis of a modified recessed active tunneling field-effect transistor
    Kim, HuiJung
    Choi, Seongwook
    Yoo, NakWon
    Rhee, SeungMan
    Lee, Myoung Jin
    Park, Young June
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (07)
  • [9] THE FIELD-EFFECT TRANSISTOR - A REVIEW
    WALLMARK, JT
    [J]. RCA REVIEW, 1963, 24 (04): : 641 - 660
  • [10] ON FIELD-EFFECT TRANSISTOR CHARACTERISTICS
    WEDLOCK, BD
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (03) : 181 - &