SIMPLE DIRECT MONITORING OF SIH3 RADICAL AND PARTICULATES IN A SILANE PLASMA WITH ULTRAVIOLET TRANSMISSION SPECTROSCOPY

被引：13

作者：

TOYODA, H ^{[1
]}

GOTO, M ^{[1
]}

KITAGAWA, M ^{[1
]}

HIRAO, T ^{[1
]}

SUGAI, H ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO,CENT RES LAB,KYOTO 61902,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4A期

关键词：

UV TRANSMISSION SPECTROSCOPY; SIH3; RADICAL; SILANE PLASMA; PARTICULATE; POWDER; MIE SCATTERING;

D O I：

10.1143/JJAP.34.L448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The silyl radical (SiH3) in a H-2/SiH4 rf plasma, is successfully detected by an easy and inexpensive method, i.e., high-sensitivity ultraviolet transmission spectroscopy (UVTS). The diffusive absorption band of the SiH3 radical is observed in the 205-240 nm region. The relative SiH3 density is measured as a function of RF power from 20 to 100 mW/cm(2) by UVTS. The UV transmittance is very sensitive to particulates in the plasma, thus enabling both particulates and SiH3 radicals to be monitored simultaneously.

引用

页码：L448 / L451

页数：4

共 19 条

[1] SIH3 RADICAL DENSITY IN PULSED SILANE PLASMA
ITABASHI, N
NISHIWAKI, N
MAGANE, M
GOTO, T
MATSUDA, A
YAMADA, C
HIROTA, E
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (03): : 585 - 590
[2] SiH3 radical density in pulsed silane plasma
Itabashi, Naoshi, 1600, (29):
[3] Measurement of the SiH3 radical density in silane plasma using infrared diode laser absorption spectroscopy
Itabashi, Naoshi
Kato, Kozo
Nishiwaki, Nobuki
Goto, Toshio
Yamada, Chikashi
Hirota, Eizi
Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
[4] MEASUREMENT OF THE SIH3 RADICAL DENSITY IN SILANE PLASMA USING INFRARED DIODE-LASER ABSORPTION-SPECTROSCOPY
ITABASHI, N
KATO, K
NISHIWAKI, N
GOTO, T
YAMADA, C
HIROTA, E
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1565 - L1567
[5] DIFFUSION-COEFFICIENT AND REACTION-RATE CONSTANT OF THE SIH3 RADICAL IN SILANE PLASMA
ITABASHI, N
KATO, K
NISHIWAKI, N
GOTO, T
YAMADA, C
HIROTA, E
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02): : L325 - L328
[6] SPATIAL-DISTRIBUTION OF SIH3 RADICALS IN RF SILANE PLASMA
ITABASHI, N
NISHIWAKI, N
MAGANE, M
NAITO, S
GOTO, T
MATSUDA, A
YAMADA, C
HIROTA, E
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03): : L505 - L507
[7] EFFECT OF DILUTION GASES ON THE SIH3 RADICAL DENSITY IN AN RF SIH4 PLASMA
NOMURA, H
KONO, A
GOTO, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B): : 4165 - 4169
[8] Effect of dilution gases on the SiH3 radical density in an RF SiH4 plasma
Nomura, Hideshi, 1600, JJAP, Minato-ku, Japan (33):
[9] DETECTION OF THE SILYL RADICAL SIH3 BY INFRARED DIODE-LASER SPECTROSCOPY
YAMADA, C
HIROTA, E
PHYSICAL REVIEW LETTERS, 1986, 56 (09) : 923 - 925
[10] POSSIBLE CONTRIBUTION OF SIH2 AND SIH3 IN THE PLASMA-INDUCED DEPOSITION OF AMORPHOUS-SILICON FROM SILANE
VEPREK, S
VEPREKHEIJMAN, MGJ
APPLIED PHYSICS LETTERS, 1990, 56 (18) : 1766 - 1768

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