GAIN AND SATURATION IN SEMICONDUCTOR-LASERS

被引：75
|
作者：
HUANG, J
CASPERSON, LW
机构：
[1] Department of Electrical Engineering, Portland State University, Portland, 97207-0751, OR
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1993年 / 25卷 / 06期
关键词：
D O I：
10.1007/BF00420579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Several approaches have been developed for modelling the gain and saturation behaviour of semiconductor lasers, and this study includes a historical review of these various approaches. Special attention is given to rate equation models and to the possibility of so-called gain nonlinearities that might affect the CW and modulation performance of semiconductor lasers. Discussions are mainly limited to the GaAs/GaAlAs and InGaAsP/InP systems, for which the gain and gain nonlinearities have been most extensively studied.
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页码：369 / 390
页数：22
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