SELECTIVE OXIDATION OF SILICON IN LOW-TEMPERATURE HIGH-PRESSURE STEAM

被引：14

作者：

POWELL, RJ

LIGENZA, JR

SCHNEIDER, MS

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 10期

关键词：

D O I：

10.1109/T-ED.1974.17982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：636 / 640

页数：5

共 50 条

[1] LOW-TEMPERATURE, HIGH-PRESSURE STEAM OXIDATION OF SILICON
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