CMOS HIGH-SPEED DUAL-MODULUS FREQUENCY-DIVIDER FOR RF FREQUENCY-SYNTHESIS

被引:29
|
作者
FOROUDI, N [1 ]
KWASNIEWSKI, TA [1 ]
机构
[1] CARLETON UNIV,DEPT ELECTR,OTTAWA,ON K1S 5B6,CANADA
关键词
D O I
10.1109/4.341735
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The architecture of a high-speed low-power-consumption CMOS dual-modulus frequency divider is presented. Compared to other designs fabricated with comparable CMOS technologies, this architecture has a better potential for high-speed operation. The circuit consumes less power than previously reported CMOS circuits, and it approaches the performance previously achieved only by bipolar or GaAS devices. The proposed circuit uses level-triggered differential logic to create an input-frequency-entrained oscillator performing a dual-modulus frequency division. In addition to high-speed and low-power consumption, the divider has a low-input signal level requirement which facilitates its incorporation into RF applications. Fabricated with a 1.2-mum 5-V CMOS technology, the divider operates up to 1.5 GHz, consuming 13.15 mW, and requiring less than 100 mV rms input amplitude.
引用
收藏
页码:93 / 100
页数:8
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