HETEROEPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILM ON SILICON BY REACTIVE SPUTTERING

被引：35

作者：

HORITA, S ^{[1
]}

MURAKAWA, M ^{[1
]}

FUJIYAMA, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4A期

关键词：

YSZ; SI; HETEROEPITAXY; REACTIVE SPUTTERING; SILICON; EPITAXIAL GROWTH;

D O I：

10.1143/JJAP.34.1942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial yttria-stabilized zirconia (YSZ) him is difficult to grow on Si by reactive sputtering with Ar + O-2 gas, since the bare Si surface is easily oxidized by plasma radiation. In order to overcome this difficulty, the substrate is subjected to weak oxidation and subsequent deposition of a very thin metallic Zr-1-x Y-x film prior to deposition of the YSZ him. It was found that the crystalline quality of the YSZ film on Si was further improved by repeating the cycle of weak oxidation and very thin metallic film deposition prior to deposition of the YSZ film. Rutherford backscattering spectrometry indicated a high-quality crystal with a channeling minimum yield of 7.4% for the YSZ film produced by this repetitive method in reactive sputtering.

引用

页码：1942 / 1946

页数：5

共 50 条

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