HOT CARRIER EFFECTS IN OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDIES OF III-V SEMICONDUCTORS

被引：0

作者：

KARPINSKA, K ^{[1
]}

DEDULEWICZ, S ^{[1
]}

GODLEWSKI, M ^{[1
]}

机构：

[1] SEMICOND PHYS INST,VILNIUS,LITHUANIA,USSR

来源：

ACTA PHYSICA POLONICA A | 1992年 / 82卷 / 04期

关键词：

D O I：

10.12693/APhysPolA.82.623

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, arc discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.

引用

页码：623 / 626

页数：4

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