DIAMOND JUNCTION COLD-CATHODE

被引：33
|
作者：
BRANDES, GR
BEETZ, CP
FEGER, CA
WRIGHT, RL
机构：
来源：
DIAMOND AND RELATED MATERIALS | 1995年 / 4卷 / 5-6期
基金：
美国国家科学基金会;
关键词：
DEVICE; DOPING; HEATED FILAMENT CVD;
D O I：
10.1016/0925-9635(94)05267-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond junction cold cathodes composed of a phosphorus doped diamond layer and a boron doped diamond layer have been fabricated and tested. The devices were rectifying and had a large, temperature-dependent series resistance that limited the current when the device was forward biased. Electrons from the device were emitted into the vacuum when the device was forward biased; no emission current was detected from the reverse biased device. The ratio of emitted current to diode current was approximately 10(-8), the ratio changing little with temperature or bias voltage.
引用
收藏
页码：586 / 590
页数：5
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