AN EXTENSION OF THE IDEAL DIODE ANALYSIS FOR THE HEAVILY DOPED P-N DIODE

被引：1
|
作者：
TENG, KW
LI, SS
KRULL, W
机构：
来源：
SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 06期
关键词：
D O I：
10.1016/0038-1101(84)90191-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：595 / 599
页数：5
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