PREPARATION AND STRUCTURE OF THIN FILMS OF BORON ON SILICON

被引:0
|
作者
PETERS, ET
POTTER, WD
机构
来源
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:473 / &
相关论文
共 50 条
  • [1] Preparation and properties of boron thin films
    Kamimura, K
    Ohkubo, M
    Shinomiya, T
    Nakao, M
    Onuma, Y
    JOURNAL OF SOLID STATE CHEMISTRY, 1997, 133 (01) : 100 - 103
  • [2] Preparation and properties of boron thin films
    Department of Electric and Electronic Engineering, Shinshu University, 500 Wakasato, Nagano 380-8553, Japan
    不详
    Thin Solid Films, (342-344):
  • [3] Preparation and properties of boron thin films
    Kamimura, K
    Nagaoka, T
    Shinomiya, T
    Nakao, M
    Onuma, Y
    Makimura, M
    THIN SOLID FILMS, 1999, 343 : 342 - 344
  • [4] Preparation and structure of unhydrogenated microcrystalline silicon thin films by sputtering
    Ehara, T
    Nagasawa, T
    MATERIALS LETTERS, 2000, 44 (3-4) : 223 - 227
  • [5] The structure study of thin boron and silicon carbonitride films by diffraction of synchrotron radiation
    Fainer, NI
    Kosinova, ML
    Yurjev, GS
    Maximovski, EA
    Rumyantsev, YM
    Asanov, IP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 448 (1-2): : 294 - 298
  • [6] Preparation of boron nitride thin films by MOCVD
    Lee, SY
    Jin, YG
    Nam, YW
    Lee, JK
    Park, D
    CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 119 - 124
  • [8] THE PREPARATION OF THIN SELF SUPPORTING BORON FILMS
    MUGGLETON, AHF
    HOWE, FA
    NUCLEAR INSTRUMENTS & METHODS, 1961, 13 (02): : 211 - 214
  • [9] Preparation, characterization and application of RF sputter deposited boron doped silicon dioxide thin films
    Tiwari, Ruchi
    Chandra, Sudhir
    Chakraborty, B. R.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (06) : 2013 - 2020
  • [10] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS
    MATSUDA, A
    MATSUMURA, M
    YAMASAKI, S
    YAMAMOTO, H
    IMURA, T
    OKUSHI, H
    IIZIMA, S
    TANAKA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186