MONTE-CARLO SIMULATION OF GAIN COMPRESSION EFFECTS IN GRINSCH QUANTUM-WELL LASER STRUCTURES

被引:4
|
作者
LAM, Y
SINGH, J
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
[2] UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,ANN ARBOR,MI 48109
关键词
D O I
10.1109/3.333681
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gain compression is widely acknowledged to be a serious limitation to the ultimate modulation bandwidth of a semiconductor laser. We have developed a numerical technique to study the gain compression effects in graded-index separate confinement heterostructure (GRINSCH) quantum well laser structures. This technique is based on the combination of the Monte Carlo simulation of the carrier dynamics in the device while under intense stimulated photon emission, and the calculation of the optical gain using a 4 x 4k . p Hamiltonian. From the simulated results, we calculated a gain compression coefficient epsilon = 1.1 x 10(-17) cm3 for a linearly graded quantum well laser structure having a 50 angstrom In0.2Ga0.8As well. We find good agreement between our results and published experiments. We have also demonstrated that our calculation method is capable of simulating the gain dynamics in the laser structure, such as those studied with femtosecond pump-probe experimental techniques.
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页码:2435 / 2442
页数:8
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