EXPERIMENTAL AND THEORETICAL-STUDIES OF MULTIQUANTUM-WELL STRUCTURES FOR UNIPOLAR AVALANCHE MULTIPLICATION

被引：3
|
作者：
TOIVONEN, M [1 ]
JALONEN, M [1 ]
PESSA, M [1 ]
LEFEBVRE, KR [1 ]
ANDERSON, NG [1 ]
机构：
[1] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA 01003
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期
关键词：
D O I：
10.1016/0921-5107(93)90356-R
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Multi-quantum well structures exhibiting intraband impact ionization were studied. Fabricated devices consisted of donor doped GaAs or In0.20Ga0.80As quantum wells and undoped AlxGa1-xAs barrier regions. Effective gain-per-stage was found to be strongly dependent on structure design and measurement conditions (incident light intensity, chopping frequency and temperature). The limits of the validity of the current single-valley model for these structures are discussed.
引用
收藏
页码：237 / 240
页数：4
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