ELECTROLUMINESCENT INTROSCOPY OF SOLAR-CELLS

The method of electroluminescent introscopy is demonstrated. It includes complex nondestructive analysis of defects in semiconductor solar cells by means of an infrared probe and the study of luminescent spectra in electron-hole homo- and hetero-junctions. The advantage of this technique is the possibility of using not only the bright electroluminescence of GaAs, but also the weak electroluminescence of silicon for analysis. The physics of the processes that occur is described. The experimental device was constructed during the research. The spectral electroluminescence curves of silicon, and photographs of nondefective silicon solar cells and their fragments lighted by their own electroluminescence at indoor temperature, are shown.