HIGH-PRESSURE PHASE-TRANSITIONS IN DIAMOND AND ZINCBLENDE SEMICONDUCTORS

被引：156

|

作者：

CHELIKOWSKY, JR

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.35.1174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：1174 / 1180

页数：7

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