A SILICON BASIS FOR SYNAPTIC PLASTICITY

被引：7
|
作者：
SCHULTZ, SR [1 ]
JABRI, MA [1 ]
机构：
[1] UNIV SYDNEY,DEPT ELECT ENGN,SYDNEY,NSW 2006,AUSTRALIA
来源：
NEURAL PROCESSING LETTERS | 1995年 / 2卷 / 06期
关键词：
D O I：
10.1007/BF02309012
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
This paper describes analogue VLSI synaptic circuitry incorporating two forms of plasticity: a nonassociative mechanism analogous to paired-pulse facilitation (PPF), and an associative form of adaptation analogous to the short-term potentiation (STP) variety of plasticity. Simulation results demonstrate expected temporal characteristics of the plasticity mechanisms. The time-course of decay of associative potentiation is established by utilising diode leakage current.
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页码：23 / 27
页数：5
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